IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 optimos ? -t2 power-transistor features ? n-channel - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25 c, v gs =10 v 45 a t c =100 c, v gs =10 v 2) 33 pulsed drain current 2) i d,pulse t c =25 c 90 avalanche energy, single pulse 2) e as i d = 22.5 a 145 mj avalanche current, single pulse i as 45 a gate source voltage 3) v gs 20 v power dissipation p tot t c =25 c 65 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 55 v r ds(on),max (smd version) 15.4 m ? i d 45 a product summary type package marking IPB45N06S3-16 pg-to263-3-2 3n0616 ipi45n06s3-16 pg-to262-3-1 3n0616 ipp45n06s3-16 pg-to220-3-1 3n0616 pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 rev. 1.1 page 1 2007-11-07
IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - 2.3 k/w thermal resistance, junction - ambient, leaded r thja --62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 55 - - v gate threshold voltage v gs(th) v ds = v gs , i d =30 a 2.1 3 4 zero gate voltage drain current i dss v ds =25 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =25 v, v gs =0 v, t j =125 c 1) - 1 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =23 a - 13.5 15.7 m ? v gs =10 v, i d =23 a, smd version - 13.2 15.4 values rev. 1.1 page 2 2007-11-07
IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 2980 - pf output capacitance c oss - 450 - reverse transfer capacitance c rss - 430 - turn-on delay time t d(on) -28-ns rise time t r -61- turn-off delay time t d(off) -26- fall time t f -68- gate char g e characteristics 2) gate to source charge q gs -23-nc gate to drain charge q gd -10- gate charge total q g -4357 gate plateau voltage v plateau - 7.2 - v reverse diode diode continous forward current i s - - 45 a diode pulse current 2) i s,pulse --90 diode forward voltage 2) v sd v gs =0 v, i f =45 a, t j =25 c - 1.1 1.3 v reverse recovery time 2) t rr -20-ns reverse recovery charge 2) q rr -25-nc 1) current is limited by bondwire; with an r thjc = 2.3 k/w the chip is able to carry 46a at 25c. for detailed information see application note anps071e t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =27.5 v, v gs =10 v, i d =45 a, r g =22 ? v dd =11 v, i d =45 a, v gs =0 to 10 v v r =27.5 v, i f = i s , d i f /d t =100 a/s 2) defined by design. not subject to production test. 3) qualified at -5v and +20v. 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 1.1 page 3 2007-11-07
IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 1 power dissipation 2 drain current p tot =f( t c ); v gs 6 v i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 0.1 1 10 100 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 70 0 50 100 150 200 t c [c] p tot [w] 0 10 20 30 40 50 0 50 100 150 200 t c [c] i d [a] rev. 1.1 page 4 2007-11-07
IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs , pulsed parameter: v gs 7 typ. transfer characteristics 8 drain-source on-state resistance i d =f( v gs ); v ds =10 v r ds(on) =f( t j ); i d =20 a; v gs =10 v parameter: t j 7 v 8 v 9 v 10 v 10 15 20 25 30 0 20406080100 i d [a] r ds(on) [m ? ] 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 10 20 30 40 50 60 70 80 90 0 5 10 15 v ds [v] i d [a] 5 10 15 20 25 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 25 c 175 c -55 c 0 25 50 75 100 2345678 v gs [v] i d [a] rev. 1.1 page 5 2007-11-07
IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) =f( t j ); v gs = v ds c =f( v ds ); v gs =0 v; f =1 mhz parameter: i d 11 forward characteristics of reverse diode 12 typ. avalanche characteristics i f =f( v sd ), pulsed i as =f( t av ) parameter: t j parameter: t j(start) 25c 100c 150c 0.1 1 10 100 0.1 1 10 100 1000 t av [s] i av [a] ciss coss crss 10 4 10 3 10 2 0 5 10 15 20 25 30 v ds [v] c [pf] 30a 300a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] 25 c 175 c 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd [v] i f [a] rev. 1.1 page 6 2007-11-07
IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 13 typ. avalanche energy 15 drain-source breakdown voltage e as =f( t j ) v br(dss) =f( t j ); i d =1 ma parameter: i d 14 typ. gate charge 16 gate charge waveforms v gs =f( q gate ); i d =45 a pulsed parameter: v dd 45 a 22.5 a 11.25 a 0 50 100 150 200 250 300 350 0 50 100 150 200 t j [c] e as [mj] v gs q gate q gs q gd q g v gs q gate q gs q gd q g 46 48 50 52 54 56 58 60 62 64 66 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 11 v 44 v 0 2 4 6 8 10 12 0204060 q gate [nc] v gs [v] rev. 1.1 page 7 2007-11-07
IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ? infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.1 page 8 2007-11-07
IPB45N06S3-16 ipi45n06s3-16, ipp45n06s3-16 revision history version data sheet 2.1 data sheet 2.1 data sheet 2.1 data sheet 2.1 data sheet 2.1 data sheet 2.1 data sheet 2.1 data sheet 2.1 data sheet 1.1 data sheet 1.1 data sheet 1.1 data sheet 1.1 changes removal of ordering code pulse current rating from 180a to 90a update of disclaimer implementation of avalanche current single pulse update of infineon address removal of foot note 3, avalanche diagrams 15.12.2006 implementation of qrr and trr typ update of data sheet layout 15.12.2006 07.11.2007 implementation of rohs and aec logo, update of feature list 07.11.2007 07.11.2007 07.11.2007 date 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 removal of vdg specification from data sheet adaptation of ias implementation of footnote 2 for eas specification rev. 1.1 page 9 2007-11-07
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